C3355A

Descriptions

 

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
FEATURES

Low noise and high gain Wide dynamic range 1.5 dB TYP., 8 dB TYP. = 1.0 GHz, VCE = 1.9 dB, = 1 GHz, VCE 15 mA.

Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Ratings to +150 Unit mW °C

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Document No. P10404EJ3V0DS00 (3rd edition) Date Published November 1999 N CP(K) Printed in Japan

Parameter DC Current Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Available Gain Collector Cutoff Current Emitter Cutoff Current Symbol hFE

Notes 1. Pulse Measurement: PW 350 µs, Duty Cycle 2% 2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.